This resulted in a decreased function purpose plus the formation of the Schottky Speak to concerning the BrGO and n-kind Si substrate. Resulting from the upper proportion of B-C and B-C3 bonding in the BrGO/Si machine than that within the rGO/Si, the decreased Schottky barrier peak with the BrGO/n-Si vertical https://www.directivepublications.org/journal-of-applied-nanoscience/